SVB Components LLP

The UTC 7N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. 

The UTC 4N65-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. 

The UTC 12N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

Features:

• RDS(ON) = 10 V
• Ultra Low Gate Charge (Typical 45 nC)
• Low Reverse Transfer Capacitance (CRSS = Typical 15 pF)
• Fast Switching Capability
• Avalanche Energy Specified
• Improved dv/dt Capability, High Ruggedness

We SVB Components LLP are the authorised distributors for UTC in India.The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT50P04 is suitable for motor drivers, high-side switch and 12V board net, etc. 

The UTC UTT50N06M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC UTT50N06M is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.


 

NPN SILICON TRANSISTOR
*High transition frequency
*Power amplifier applications
*Driver stage amplifier applications 

N-Channel 60V 50A (Tc) 110W (Tc) Through Hole TO-220AB. We, SVB Components LLP, established in year 2011. We are coveted organization, engaged in Semiconductors Components distribution. Our headquarter is situated at Mumbai with expanded network of local sales offices all over India.

The UTC 4N80 is a N-channel mode Power FET. It uses UTC’s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N80 is universally applied in high efficiency switch mode power supply.

The UTC 7N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low forward voltage, low gate to anode leakage current, low offset voltage and high peak output voltage, etc. The UTC 2N6027 is suitable for timing, thyristor-trigger, oscillator and pulse circuits, etc. 

We, SVB Components LLP, established in year 2011. We are coveted organization, engaged in Semiconductors Components distribution are the authorised distributors for HORNBY.

FEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applicationsFEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applicationsFEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applicationsFEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applicationsFEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applicationsFEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applicationsFEATURES *High transition frequency *Power amplifier applications *Driver stage amplifier applications